frequency dividers - chip 1 1 - 14 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com hmc363 gaas hbt mmic divide-by-8, dc - 12 ghz general description features functional diagram the hmc363 is a low noise divide-by-8 static divider with ingap gaas hbt technology that has a small size of 1.45 x 0.69 mm. this device operates from dc (with a square wave input) to 12 ghz input frequency with a single +5v dc supply. the low additive ssb phase noise of -153 dbc/hz at 100 khz offset helps the user maintain good system noise performance. ultra low ssb phase noise: -153 dbc/hz wide bandwidth output power: -6 dbm single dc supply: +5v small size: 1.45 x 0.69 x 0.1 mm typical applications prescaler for dc to x band pll applications: ? satellite communication systems ? fiber optic ? point-to-point and point-to-multi-point radios ? vsat electrical speci cations, t a = +25 c, 50 ohm system, vcc = 5v v04.0109 parameter conditions min. typ. max. units maximum input frequency 12 13 ghz minimum input frequency sine wave input. [1] 0.2 0.5 ghz input power range fin = 1 to 8 ghz -15 >-20 +10 dbm fin = 8 to 10 ghz -10 >-15 +2 dbm fin = 10 to 12 ghz -5 >-8 0 dbm output power [2] fin = 12 ghz -9 -6 dbm reverse leakage both rf outputs terminated 60 db ssb phase noise (100 khz offset) pin = 0 dbm, fin = 6 ghz -153 dbc/hz output transition time pin = 0 dbm, fout = 882 mhz 100 ps supply current (icc) [2] 70 ma [1] divider will operate down to dc for square-wave input signal. [2] when operated in low power mode (pin 8 oating).
frequency dividers - chip 1 1 - 15 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com -30 -20 -10 0 10 20 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 input power (dbm) input frequency (ghz) ssb phase noise performance, pin= 0 dbm, t= 25 c input sensitivity window, t= 25 c input sensitivity window vs. temperature output power vs. temperature reverse leakage, pin= 0 dbm, t= 25 c output harmonic content, pin= 0 dbm, t= 25 c recommended operating window -30 -20 -10 0 10 20 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 min pin +25 c max pin +25 c min pin +85 c max pin +85 c min pin -55 c max pin -55 c input power (dbm) input frequency (ghz) -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 03691215 +25 c +85 c -55 c output power (dbm) input frequency (ghz) -160 -140 -120 -100 -80 -60 -40 -20 0 10 2 10 3 10 4 10 5 10 6 10 7 ssb phase noise (dbc/hz) offset frequency (hz) -60 -50 -40 -30 -20 -10 0 03691215 pfeedthru 2nd harmonic 3rd harmonic output level (dbm) input frequency (ghz) -70 -60 -50 -40 -30 -20 -10 0 03691215 both output ports terminated one output port terminated power level (dbm) input frequency (ghz) hmc363 v04.0109 gaas hbt mmic divide-by-8, dc - 12 ghz
frequency dividers - chip 1 1 - 16 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com output voltage waveform, pin= 0 dbm, fout= 882 mhz, t= 25 c absolute maximum ratings outline drawing typical supply current vs. vcc note: divider will operate over full voltage range shown above note: 1. all dimensions in inches (millimeters) 2. all tolerances are 0.001 (0.025) 3. die thickness is 0.004 (0.100) backside is ground 4. bond pads are 0.004 (0.100) sqaure 5. bond pad spacing, ctr-ctr: 0.006 (0.150) 6. backside metallization: gold 7. bond pad metallization: gold vcc (v) icc (ma) 4.75 64 5.0 70 5.25 75 rf input (vcc = +5v) +13 dbm vcc +5.5v vlogic vcc -1.6v to vcc -1.2v storage temperature -65 to +150 c operating temperature -55 to +85 c electrostatic sensitive device observe handling precautions die packaging information [1] standard alternate wp-8 (waffle pack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation. -300 -200 -100 0 100 200 300 22.7 23.1 23.5 23.9 24.3 24.7 amplitude (mv) time (ns) hmc363 v04.0109 gaas hbt mmic divide-by-8, dc - 12 ghz
frequency dividers - chip 1 1 - 17 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com pad description pad number function description interface schematic 1 in rf input 180 out of phase with pad 3 for differential operation. ac ground for single ended operation. 2 in rf input must be dc blocked. 3, 4, 5 vcc supply voltage 5v 0.25v can be applied to pad 3, 4, or 5. 6out divided output 7 out divided output 180 out of phase with out. 8pwr sel in the low power mode, the power select pin is left oating. by grounding this pin, the output power is increased by approximately 10 db. 9pwr dwn the power down pin is grounded for normal operation. applying 5 volts to this pin will power down this device. 10 disable the disable pin is grounded for normal operation. applying 5 volts to this pin will disable the input buffer ampli er. hmc363 v04.0109 gaas hbt mmic divide-by-8, dc - 12 ghz
frequency dividers - chip 1 1 - 18 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com truth table assembly diagram ac coupling capacitors. to +5v vcc supply (bypassed via 10 uf capacitor). ac coupling capacitors. optional ac coupled differential input. should be ac grounded for single ended operation. optional ac coupled differential output. for best single ended reverse leakage performance, this port should be terminated into 50 ohm. this port should be grounded for normal operation. applying +5v to this port will disable the input buffer ampli er. this port should be grounded for normal operation. applying +5v to this port will power down the device. for high power output, this port should be bonded to ground. for low power output, this port should be oating. function pin 5v gnd float disable 10 output off output on x pwr dwn 9 power down power up x pwr sel 8x high power output low power output x = state not permitted. hmc363 v04.0109 gaas hbt mmic divide-by-8, dc - 12 ghz
frequency dividers - chip 1 1 - 19 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com handling precautions follow these precautions to avoid permanent damage. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or ngers. mounting the chip is back-metallized and can be die mounted with electrically conductive epoxy. the mounting surface should be clean and at. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire. thermosonic wirebonding with a nominal stage temperature of 150 c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. use the minimum level of ultrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated on the package or substrate. all bonds should be as short as possible <0.31 mm (12 mils). hmc363 v04.0109 gaas hbt mmic divide-by-8, dc - 12 ghz
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